STP4LN80K5 Datasheet دیتاشیت

STP4LN80K5 Datasheet

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نام دیتاشیت STP4LN80K5 Datasheet
حجم فایل 731.745 کیلوبایت
نوع فایل pdf
تعداد صفحات 13

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STP4LN80K5 13 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STP4LN80K5
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 60W
  • Total Gate Charge (Qg@Vgs): 3.7nC@10V
  • Drain Source Voltage (Vdss): 800V
  • Input Capacitance (Ciss@Vds): 122pF@100V
  • Continuous Drain Current (Id): 3A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@100uA
  • Reverse Transfer Capacitance (Crss@Vds): 0.3pF@100V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.1Ω@10V,1A
  • Package: TO-220
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ K5
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.6Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 122pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
  • Base Part Number: STP4L
  • detail: N-Channel 800V 3A (Tc) 60W (Tc) Through Hole TO-220

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